Electric Field Effect in Diluted Magnetic Insulator AnataseCo: TiO2
نویسندگان
چکیده
منابع مشابه
Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires.
Field-effect transistors (FETs) fabricated from undoped and Co(2+)-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co(2+)-doping, which is revealed by ...
متن کاملHall effect at the magnetic-field-tuned superconductor-insulator transition
The Hall effect for disordered superconducting films in magnetic field is discussed, with special focus on the vicinity of the magnetic field-tuned superconductor-insulator transition. Evidence is presented that upon ensemble averaging this transition possesses a "hidden" particle/hole symmetry. This symmetry implies that right at the transition the Hall resistance vanishes. Relevance to recent...
متن کاملNew electric field in asymmetric magnetic reconnection.
We present a theory and numerical evidence for the existence of a previously unexplored in-plane electric field in collisionless asymmetric magnetic reconnection. This electric field, dubbed the "Larmor electric field," is associated with finite Larmor radius effects and is distinct from the known Hall electric field. Potentially, it could be an important indicator for the upcoming Magnetospher...
متن کاملCalculation of Electric Field Characteristics of Insulator Under Sandstorm Condition
Sandstorm has an effect on the electric field characteristics of outdoor insulator, and may result in flashover. The analysis of the electric field characteristic of insulator under sandstorm condition is very important. The electrostatic field finite element method (FEM) is used to calculate the electric field distribution along long rod insulator under sandstorm condition with FEM software. T...
متن کاملElectric field Assisted Nanostucturing of a Mott Insulator
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2005
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.94.126601